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N-CHANNEL 500V - 0.75 - 8.6 A TO-220/TO-220FP PowerMeshTM MOSFET
TYPE STP9NB50 STP9NB50FP
s s s s s
STP9NB50 STP9NB50FP
VDSS 500 V 500 V
RDS(on) < 0.85 < 0.85
ID 8.6 A 4.9 A
TYPICAL RDS(on) = 0.75 EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED
3 1 2 1 2
3
TO-220
TO-220FP
DESCRIPTION Using the latest high voltage MESH OVERLAYTM process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company's proprieraty edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics. APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SWITH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE ABSOLUTE MAXIMUM RATINGS
Symbol VDS VDGR VGS ID ID IDM (q) PTOT dv/dt (1) VISO Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 k) Gate- source Voltage Drain Current (continuos) at TC = 25C Drain Current (continuos) at TC = 100C Drain Current (pulsed) Total Dissipation at TC = 25C Derating Factor Peak Diode Recovery voltage slope Insulation Withstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature
INTERNAL SCHEMATIC DIAGRAM
Value STP9NB50 500 500 30 8.6 5.4 34.4 125 1 4.5 -65 to 150 150
(1)ISD<9A, di/dt<200A/, VDDUnit
STP9NB50FP V V V 4.9 3.1 34.4 40 0.32 4.5 2000 A A A W W/C V/ns V C C
(*)Pulse width limited by safe operating area
May 2000
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THERMAL DATA
TO-220 Rthj-case Rthj-amb Rthc-sink Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature For Soldering Purpose 1 62.5 0.5 300 TO-220FP 3.13 C/W C/W C/W C
AVALANCHE CHARACTERISTICS
Symbol IAR EAS Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) Single Pulse Avalanche Energy (starting Tj = 25 C, ID = IAR, VDD = 50 V) Max Value 8.6 520 Unit A mJ
ELECTRICAL CHARACTERISTICS (TCASE = 25 C UNLESS OTHERWISE SPECIFIED) OFF
Symbol V(BR)DSS IDSS IGSS Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current (V GS = 0) Gate-body Leakage Current (VDS = 0) Test Conditions ID = 250 A, VGS = 0 VDS = Max Rating VDS = Max Rating, TC = 125 C VGS = 30V Min. 500 1 50 100 Typ. Max. Unit V A A nA
ON (1)
Symbol VGS(th) R DS(on) ID(on) Parameter Gate Threshold Voltage Static Drain-source On Resistance On State Drain Current Test Conditions VDS = VGS, ID = 250 A VGS = 10V, ID = 4.3 A VDS > ID(on) x RDS(on)max, VGS = 10V Min. 3 Typ. 4 0.75 Max. 5 0.85 Unit V
8.6
A
DYNAMIC
Symbol gfs (1) C iss Coss Crss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25V, f = 1 MHz, VGS = 0 Test Conditions VDS > ID(on) x RDS(on)max, ID = 4.3 A Min. Typ. 5.7 1250 175 20 Max. Unit S pF pF pF
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ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING ON
Symbol td(on) tr Qg Qgs Q gd Parameter Turn-on Delay Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD = 400V, I D = 8.6 A, VGS = 10V Test Conditions VDD = 250 V, ID = 4.3 A RG = 4.7 VGS = 10 V (see test circuit, Figure 3) Min. Typ. 19 11 32 10.6 13.7 45 Max. Unit ns ns nC nC nC
SWITCHING OFF
Symbol tr(Voff) tf tc Parameter Off-voltage Rise Time Fall Time Cross-over Time Test Condit ions VDD = 400V, ID = 8.6 A, R G = 4.7, VGS = 10V (see test circuit, Figure 5) Min. Typ. 11.5 11 20 Max. Unit ns ns ns
SOURCE DRAIN DIODE
Symbol ISD ISDM (2) VSD (1) trr Qrr IRRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 8.6 A, VGS = 0 ISD = 8.6 A, di/dt = 100A/s, VDD = 100V, T j = 150C (see test circuit, Figure 5) 420 3.5 16.5 Test Conditions Min. Typ. Max. 8.6 34.4 1.6 Unit A A V ns C A
Note: 1. Pulsed: Pulse duration = 300 s, duty cycle 1.5 %. 2. Pulse width limited by safe operating area.
Safe Operating Area
Safe Operating Area for TO-220FP
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Thermal Impedence for TO-220 Thermal Impedence for TO-220FP
Output Characteristics
Transfer Characteristics
Transconductance
Static Drain-source On Resistance
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Gate Charge vs Gate-source Voltage Capacitance Variations
Normalized Gate Threshold Voltage vs Temp.
Normalized On Resistance vs Temperature
Source-drain Diode Forward Characteristics
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Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform
Fig. 3: Switching Times Test Circuit For Resistive Load
Fig. 4: Gate Charge test Circuit
Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times
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STP9NB50/FP
TO-220 MECHANICAL DATA
DIM. MIN. A C D D1 E F F1 F2 G G1 H2 L2 L4 L5 L6 L7 L9 DIA. 13.0 2.65 15.25 6.2 3.5 3.75 0.49 0.61 1.14 1.14 4.95 2.4 10.0 16.4 14.0 2.95 15.75 6.6 3.93 3.85 0.511 0.104 0.600 0.244 0.137 0.147
E
mm TYP. MAX. 4.60 1.32 2.72 1.27 0.70 0.88 1.70 1.70 5.15 2.7 10.40 0.019 0.024 0.044 0.044 0.194 0.094 0.393 MIN. 0.173 0.048 0.094 4.40 1.23 2.40
inch TYP. MAX. 0.181 0.051 0.107 0.050 0.027 0.034 0.067 0.067 0.203 0.106 0.409 0.645 0.551 0.116 0.620 0.260 0.154 0.151
A
C
D1
L2
F1
D
G1
Dia.
F2 F
L5 L7 L6
L9
L4
G
H2
P011C
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TO-220FP MECHANICAL DATA
DIM. MIN. A B D E F F1 F2 G G1 H L2 L3 L4 L6 L7 O 28.6 9.8 15.9 9 3 4.4 2.5 2.5 0.45 0.75 1.15 1.15 4.95 2.4 10 16 30.6 10.6 16.4 9.3 3.2 1.126 0.385 0.626 0.354 0.118 mm TYP. MAX. 4.6 2.7 2.75 0.7 1 1.7 1.7 5.2 2.7 10.4 MIN. 0.173 0.098 0.098 0.017 0.030 0.045 0.045 0.195 0.094 0.393 0.630 1.204 0.417 0.645 0.366 0.126 inch TYP. MAX. 0.181 0.106 0.108 0.027 0.039 0.067 0.067 0.204 0.106 0.409
A
B
L3 L6 L7 F1 F
D
G1
E
H
F2
123 L2 L4
G
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Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics (c) 2000 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com
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